Fabrication of PZT Thin Films by Liquid Delivery MOCVD with Conventional Multi-Sources and a Novel Cocktail Source
Fabrication of PZT Thin Films by Liquid Delivery MOCVD with Conventional Multi-Sources and a Novel Cocktail Source
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使用传统多源和新型混合源通过液体输送 MOCVD 制备 PZT 薄膜
DOI：
10.1080/00150190390238234
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发表时间：
2003
期刊：
影响因子：
0.8
通讯作者：
Norikazu Abe
中科院分区：
文献类型：
--
作者：
T. Shiosaki;S. Okamura;M. Miyake;Y. Otani;Norikazu Abe
采用传统的多源送液MOCVD方法制备了Pb（Zr，Ti）O3（PZT）铁电薄膜。在5托的反应器压力和550°C的衬底温度下，通过使用Zr（DIBM）4代替Zr（DIBM）4作为Zr源，获得20 nm/min的沉积速率。通过将衬底温度从600 °C降低到400°C，台阶覆盖率从50%增加到100%，尽管沉积速率降低到一半。在6英寸的晶片上成功地形成了均匀的PZT薄膜。整个晶片的厚度变化小于5%。然而，中心的反射极化是边界的一半。还检查了通过将Pb（MEHD）2、Zr（MEHD）4和Ti（MPD）（MEHD）2与ECH混合制备的混合物源。混合物源稳定3个月。PZT薄膜沉积使用鸡尾酒源表现出铁电性能。然而，也形成了强取向的PbPtx合金和取向的PbO。结晶度、电性能和表面形貌的改善有待于进一步研究。
Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were fabricated by liquid delivery MOCVD using conventional multi-sources. The deposition rate of 20 nm/min was attained at the reactor pressure of 5 Torr and the substrate temperature of 550°C by using Zr(DIBM)4 as a Zr-source instead of Zr(DPM)4. The step coverage increased from 50 to 100% by decreasing the substrate temperature from 600 to 400°C although the deposition rate decreased to the half. The uniform PZT thin films were successfully formed on 6-inch wafers. The variation in thickness was less than 5% all over the wafers. However, the remanent polarization at the center was half of that at the border. A cocktail source prepared by mixing Pb(METHD)2, Zr(METHD)4 and Ti(MPD)(METHD)2 with ECH was also examined. The cocktail source was stable for 3 months. PZT thin films deposited using the cocktail source exhibited ferroelectric properties. However, strongly oriented PbPtx alloy and oriented PbO were also formed. The improvement in crystallinity, electrical properties and surface morphology remains for future study.