Growth and Properties of Hexagonal SiC Bulk Crystals and Epilayers
Growth and Properties of Hexagonal SiC Bulk Crystals and Epilayers
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DOI：
10.1063/1.2751930
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发表时间：
2007-06
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影响因子：
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通讯作者：
M. Skowronski
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文献类型：
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作者：
M. Skowronski
通过物理气相传输生长块状六方 SiC 晶体依赖于在 2200-2400 °C 的半封闭坩埚中进行的固体 SiC 装料的升华/冷凝。富含硅蒸气的逐渐损失导致晶体化学计量从硅转变为富含碳以及氮掺杂剂的相关变化。生长过程中的热梯度引起的应力有时会超过因高生长温度而降低的临界解析剪切应力。这通过<11-20>(0001)滑移系统的激活导致生长的晶粒发生塑性变形。 SiC 外延层是通过化学气相沉积工艺在氢气载气中使用硅烷和丙烷在 1500–1700 °C 下进行沉积的。由于在这些温度下成核的多型体是 3C-SiC，因此这些层以步进流模式在切边基板上生长。适用于高压功率器件的外延生产层的方法，即具有低缺陷密度（<1 cm−2）、低掺杂（1×1015 cm−3）和长载流子...
Growth of bulk hexagonal SiC crystals by Physical Vapor Transport relies on sublimation / condensation of a solid SiC charge performed in a semi‐closed crucible at 2200–2400 °C. The gradual loss of silicon‐rich vapor results in the shift of crystal stoichiometry from silicon to carbon rich and associated change of nitrogen dopants. The thermal gradients during growth induce stresses sometimes in excess of critical resolved shear stress reduced by high growth temperatures. This results in plastic deformation of the growing boules through the activation of 〈11–20〉(0001) slip system. SiC epitaxial layers are deposited by Chemical Vapor Deposition process performed at 1500–1700 °C using silane and propane in hydrogen carrier gas. Since the polytype nucleating at these temperature is 3C‐SiC, the layers are grown on off‐cut substrates in step flow mode. Approaches to epitaxy producing layers suitable for high voltage power devices i.e. with low defect density (<1 cm−2), low doping (1×1015 cm−3), and long carrie...