Quantum transport in In0.75Ga0.25As quantum wires
Quantum transport in In0.75Ga0.25As quantum wires
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In0.75Ga0.25As量子线中的量子输运
DOI：
10.1063/1.2911730
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发表时间：
2008
影响因子：
4
通讯作者：
G. Jones
中科院分区：
文献类型：
--
作者：
P. Simmonds;F. Sfigakis;H. Beere;D. Ritchie;M. Pepper;Donald M. Anderson;G. Jones
除了在2e2/h的整数倍处的量子化电导平台外，In0.75Ga0.25As量子线的微分电导G=Di/dv在源漏偏压下的平台分别为0.25(2e2/h)和0.75(2e2/h)。这一观察结果与0.7结构的自旋能隙模型一致。用倾斜磁场诱导朗道能级交叉，用符合法测得g因子为∼-9。当载流子密度为1.4x1011 cm−2时，该材料的迁移率为1.8x105cm2/vs，可用于进一步研究量子线中的电子-电子相互作用效应。
In addition to quantized conductance plateaus at integer multiples of 2e2∕h, the differential conductance G=dI∕dV shows plateaus at 0.25(2e2∕h) and 0.75(2e2∕h) under applied source-drain bias in In0.75Ga0.25As quantum wires defined by insulated split gates. This observation is consistent with a spin-gap model for the 0.7 structure. Using a tilted magnetic field to induce Landau level crossings, the g factor was measured to be ∼9 by the coincidence method. This material, with a mobility of 1.8×105cm2∕Vs at a carrier density of 1.4×1011cm−2, may prove useful for further study of electron-electron interaction effects in quantum wires.