Intermediate band materials obtained by rapid thermal process of Co-implanted silicon
Intermediate band materials obtained by rapid thermal process of Co-implanted silicon
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共注入硅快速热处理获得的中能带材料
DOI：
10.1016/j.matlet.2017.08.095
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发表时间：
2017
影响因子：
3
通讯作者：
Zhou Lang
中科院分区：
文献类型：
--
作者：
Yuan Jiren;Huang Haibin;Deng Xinhua;Gong Mingang;Liu Cuicui;Yue Zhihao;Gao Chao;Zhou Naigen;Zhou Lang
中间带太阳能电池（IBSC）是一种具有很高效率极限的新型光伏器件。中间带材料是制造高性能中间带材料的关键因素。我们探索了在硅中注入Co并进行快速热处理（RTP）的方法来制备IB材料。结果表明，在Si层中成功地形成了IB。IB位于价带边缘以上约0.3 eV处。此外，样品中没有杂质相形成。结果表明，离子注入与RTP相结合可以有效地形成IB材料。由于RTP技术有利于制备具有较厚杂质层的IB材料，并且便于批量生产，因此该方法具有吸引力。
The intermediate band solar cell (IBSC) is a kind of novel photovoltaic device with very high efficiency limit. The intermediate band (IB) material is a key factor for fabricating high-performance IBSC. We explore to prepare IB material by Co implantation in silicon followed by a rapid thermal process (RTP). The results show that an IB is successfully formed in Si layer. The IB is located at about 0.3 eV above the valence band edge. Moreover, no impurity phase is formed in the samples. Our results indicated that it is effective to form IB materials with the combination of ion implantation and RTP method. This approach is attractive since the RTP technique is beneficial to fabricate IB materials with thick impurity layers and convenient to use for mass production.