LATTICE PARAMETER IN SI1-YCY EPILAYERS: DEVIATION FROM VEGARD'S RULE
LATTICE PARAMETER IN SI1-YCY EPILAYERS: DEVIATION FROM VEGARD'S RULE
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DOI：
10.1063/1.121127
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发表时间：
1998-07
影响因子：
4
通讯作者：
M. Berti;D. Salvador;A. Drigo;F. Romanato;J. Stangl;S. Zerlauth;F. Schäffler;G. Bauer
中科院分区：
文献类型：
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作者：
M. Berti;D. Salvador;A. Drigo;F. Romanato;J. Stangl;S. Zerlauth;F. Schäffler;G. Bauer
用5.72 MeV的4He+离子束对Si1−yCy脱膜样品（0<y<0.012）进行了共振后向散射实验，测定了样品中C的精确含量。该束流能量比先前使用的4.265 MeV更适合于C含量的测定。从这些研究与x射线衍射实验的相关性来看，观察到Si与金刚石或β-SiC之间的晶格参数变化与Vegard规则的显著偏差，在y<0.012时分别达到30%或13%。这种负偏差与Kelires最近的理论预测是一致的。
The precise C content of a series of Si1−yCy epilayer samples (0<y<0.012) was determined by resonant backscattering experiments using a 4He+ ion beam at 5.72 MeV. This beam energy is more suitable for the determination of the C content than the previously used 4.265 MeV. From the correlation of these investigations with x-ray diffraction experiments, a significant deviation of the lattice parameter variation in Si1−yCy from Vegard’s rule between Si and diamond or β-SiC was observed, which amounts up to 30% or 13%, respectively, for y<0.012. This negative deviation is in agreement with recent theoretical predictions by Kelires.