Sensitive and selective NO2 gas sensor based on WO3 nanoplates

Sensitive and selective NO2 gas sensor based on WO3 nanoplates
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DOI:
10.1016/j.snb.2016.08.177
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发表时间:
2017-03-01
影响因子:
8.4
通讯作者:
Patil, P. S.
Patil, P. S.
中科院分区:
化学1区
文献类型:
--
作者:
Shendage, S. S.;Patil, V. L.;Patil, P. S.

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基于化学阻性金属氧化物半导体的气体传感器被广泛使用,包括在中等温度下的二氧化氮(NO2)。在这项工作中,利用一种简单易行的水热技术,在没有任何种子层的情况下,直接在钠钙玻璃衬底上生长了氧化钨(WO_3)薄膜,以制备NO2气体传感器。据我们所知,在没有任何种子层的情况下在玻璃衬底上沉积纳米WO_3薄膜的报道很少。用X射线衍射仪、拉曼光谱、场发射扫描电子显微镜、透射电子显微镜、紫外可见光谱和Brunauer-Emmett-Teller技术对样品进行了表征。表面形貌和结构表征表明,合成的WO_3薄膜具有二维(2D)纳米板状结构,板厚在90~150 nm之间,并具有正交晶系结构。此外,在相对较低的工作温度下,WO_3的2D纳米板对有毒的NO2气体表现出10~5ppm的气体响应。新的合成路线和WO_3纳米板的传感行为为制备低成本的气敏元件提供了一条新的途径。(C)2016爱思唯尔B.V.保留所有权利。
Gas sensors based on a chemiresistive metal oxide semiconductor are widely used including nitrogen dioxide (NO2) at a moderate temperature. In this work efforts are taken to fabricate NO2 gas sensor using thin films of tungsten oxide (WO3) grown directly on to a soda-lime glass substrate without assistance of any seed layer by a simple and a facile hydrothermal technique. As per our knowledge, the deposition of nanostructured WO3 thin films without assistance of any seed layer on the glass substrate was rarely reported. The WO3 thin film samples were synthesized at various deposition times ranging from 3 h to 7 h and were characterized by X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, transmission electron microscopy, UV-vis spectroscopy and Brunauer-Emmett-Teller techniques. The surface morphological and structural characterization showed the two dimensional (2D) nanoplate-like structure of as synthesized WO3 thin films with plate thickness ranging from 90 to 150 nm and had an orthorhombic structure, respectively. Moreover, the 2D nanoplates of WO3 exhibited a gas response 10 for 5 ppm for toxic NO2 gas at relatively low operating temperature. The new synthesis route and sensing behavior of as synthesized WO3 nanoplates revealed a promising candidate for the fabrication of the cost effective gas sensors. (C) 2016 Elsevier B.V. All rights reserved.