Wall Ion Loss Reduction by Acceleration Zone Shifting in Anode-Layer Hall Thruster
Wall Ion Loss Reduction by Acceleration Zone Shifting in Anode-Layer Hall Thruster
复制标题
通过阳极层霍尔推进器中的加速区移动减少壁离子损失
DOI：
10.2514/1.b38460
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发表时间：
2022
影响因子：
1.9
通讯作者：
H. Koizumi
中科院分区：
文献类型：
--
作者：
R. Kawashima;Yushi Hamada;S. Kawabata;K. Komurasaki;H. Koizumi
Br =径向磁通量密度，T Ei，w =与壁碰撞的离子能量，eV Eion =电离势，eV Ework =壁的功函数，eV e =元电荷，C Id =放电电流，A IG =保护环电流，A ig =保护环电流密度，A/m2 ii，w =离子壁电流密度，A/m2 M =壁材料的原子质量，kg Pi，w =离子壁能量损失，W S =离子收集表面积，m2 Vd =放电电压，V Vg =保护环电压，V Y =溅射产率，原子/离子YE =溅射产率的能量因子，原子/离子Yv =体积溅射产率，mm 3/C Yθ =溅射产率的角度因子，- γe =电子电流因子，- γSEE =二次电子发射产率，- ε =壁面侵蚀率，μm/h ρ =壁面材料密度，kg/m3
Br = radial magnetic flux density, T Ei,w = ion energy colliding with wall, eV Eion = ionization potential, eV Ework = work function of wall, eV e = elementary charge, C Id = discharge current, A Ig = guard ring current, A ig = guard ring current density, A/m2 ii,w = ion wall current density, A/m2 M = atomic mass of wall material, kg Pi,w = ion wall energy loss, W S = ion collecting surface area, m2 Vd = discharge voltage, V Vg = guard ring voltage, V Y = sputter yield, atoms/ion YE = energy factor of sputter yield, atoms/ion Yv = volume sputter yield, mm3/C Yθ = angle factor of sputter yield, – γe = electron current factor, – γSEE = secondary electron emission yield, – ε = wall erosion rate, μm/h ρ = density of wall material, kg/m3
阳极层型霍尔推进器 RAIJIN66 加速区移动的特性
影响因子：
4
作者：
Hamada Y.;Kawashima R.;Bak J.;Komurasaki K.;Koizumi H.
通讯作者：
Koizumi H.