Thermoelectric properties and anisotropic electronic band structure on the In4Se3−x compounds
Thermoelectric properties and anisotropic electronic band structure on the In4Se3−x compounds
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DOI：
10.1063/1.3266579
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发表时间：
2009-11
影响因子：
4
通讯作者：
J. Rhyee;Eunseog Cho;Kyu Hyoung Lee;S. M. Lee;Sang Il Kim;Hyun Sik Kim;Y. Kwon;Sung‐Jin Kim
中科院分区：
文献类型：
--
作者：
J. Rhyee;Eunseog Cho;Kyu Hyoung Lee;S. M. Lee;Sang Il Kim;Hyun Sik Kim;Y. Kwon;Sung‐Jin Kim
报道了缺Se的In_4Se_3-−_x(0.02≤_x-≤_(0.5))多晶化合物的高热电优值(ZT)和各向异性电子能带结构。缺Se(X)具有减小半导体带隙和提高功率因数的作用。对In_4Se_3-−_x(x=0.25)的能带结构计算表明，在Γ点和Y-S对称线有局域空穴能带，而沿c轴有明显的电子能带弥散。在这里，我们认为这些化合物的高ZT值是由各向异性的电子能带结构和Peierls失真引起的。
We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3−x (0.02≤x≤0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of decreasing the semiconducting band gap and increasing the power factor. The band structure calculation for In4Se3−x (x=0.25) exhibits localized hole bands at the Γ-point and Y-S symmetry line, whereas the significant electronic band dispersion is observed along the c-axis. Here, we propose that the high ZT values on those compounds are originated from the anisotropic electronic band structure as well as Peierls distortion.