A closed-form stability model for cross-coupled inverters operating in sub-threshold voltage region
A closed-form stability model for cross-coupled inverters operating in sub-threshold voltage region
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DOI：
10.1109/aspdac.2016.7428092
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Tatsuya Kamakari;Jun Shiomi;T. Ishihara;H. Onodera
中科院分区：
文献类型：
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作者：
Tatsuya Kamakari;Jun Shiomi;T. Ishihara;H. Onodera
交叉耦合反相器是片上存储器子系统的重要组成部分，在同步大规模集成电路中起着重要作用。本文提出了一种工作在亚阈值电压区的交叉耦合逆变器的稳定性分析模型。该模型分析表明，如果阈值电压分布为高斯分布，则交叉耦合逆变器的最小工作电压正态分布在高s区域。通过使用该模型的简单计算，可以精确地导出交叉耦合逆变器的产量变为特定值的最小电源电压。假设商业化的28 nm工艺技术的蒙特-卡罗模拟证明了所提出的模型的准确性和有效性。基于该模型，本文提出了可变容差存储器的设计策略。
A cross-coupled inverter which is an essential element of on-chip memory subsystems plays an important role in synchronous LSI circuits. In this paper, an analytical stability model for a cross-coupled inverter operating in a sub-threshold voltage region is proposed. The proposed model analytically shows that the minimum operating voltage of the cross-coupled inverter distributes normally in a high-s region if the distribution of the threshold voltage is Gaussian. The minimum supply voltage at which the yield of the cross-coupled inverter becomes a specific value can be accurately derived by a simple calculation using the model. Monte-Carlo simulation assuming a commercial 28 nm process technology demonstrates the accuracy and the validity of the proposed model. Based on the model, this paper shows strategies for variation tolerant memory design.