Evaluation of β-FeSi2/Si-interface using Ag-coating on Si surface
Evaluation of β-FeSi2/Si-interface using Ag-coating on Si surface
复制标题
使用 Si 表面镀银评估 β-FeSi2/Si 界面
DOI：
10.1002/pssc.201300331
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and M. Itakura
中科院分区：
文献类型：
--
作者：
K. Akiyama;S. Motomura;G. Hayashi;H. Funakubo;and M. Itakura
β-FeSi2薄膜分别在Ag涂覆的Si(100)、Ag涂覆的Si(110)和Ag涂覆的Si(111)基底上优选(100)-、(010)/(001)-和(101)/(110)-取向。 (100)、(010)/(001)和(101)/(110)取向β-FeSi2薄膜的β-FeSi2800、040/004和202/220的摇摆曲线半峰全宽分别为0.59°、0.20°和0.18°，表明晶体取向质量良好。当Ar离子激光照射到Si衬底一侧间接激发样品时，Ag涂覆的Si(111)衬底上的(101)/(110)取向的β-FeSi2薄膜的光致发光强度大于其他薄膜。由β-FeSi2(101)/(110)面和Si(111)面构成的异质界面似乎具有最低的非辐射中心密度。从透射电镜分析来看，由β-FeSi2(101)/(110)面和Si(111)面构成的异质界面被认为是热力学稳定的。 （© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
β‐FeSi2films preferred to (100)‐, (010)/(001)‐ and (101)/(110)‐orientation on Ag‐coated Si(100), Ag‐coated Si(110) and Ag‐coated Si(111) substrates, respectively. The full width at half maximum of the rocking curve of the β‐FeSi2800,040/004and202/220for the (100)‐, (010)/(001)‐ and (101)/(110)‐oriented β‐FeSi2films were 0.59°, 0.20° and 0.18°, indicating the good perfect quality of the crystal orientation. The photoluminescence intensity of the (101)/(110)‐orientated β‐FeSi2films on Ag‐coated Si(111) substrates was larger than the others, when the samples were indirectly excited by Ar‐ion laser irradiation to the Si substrate side. The hetero‐interface constituted with the β‐FeSi2(101)/(110) plane and Si(111) plane seems to have the lowest density of non‐radiative center. From the transmission electron microscope analysis, the hetero‐interface constituted with the β‐FeSi2(101)/(110) plane and Si(111) plane is considered as thermodynamically stable. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)