Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study
Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study
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DOI:
10.1063/1.4829457
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发表时间:
2013-11
影响因子:
3.2
通讯作者:
Zhenyu Xiao;Yongfeng Li;B. Yao;R. Deng;Z. Ding;Tom Wu;Gang Yang;C. Li;Zi-Yuan Dong;
中科院分区:
文献类型:
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作者:
Zhenyu Xiao;Yongfeng Li;B. Yao;R. Deng;Z. Ding;Tom Wu;Gang Yang;C. Li;Zi-Yuan Dong;
We report on bandgap engineering of an emerging photovoltaic material of Cu 2Cdx Zn 1−x SnS 4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55–1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu 2ZnSnS4/Cu2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers.