Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes
Structural differences between capped GaSb nanostructures grown by Stranski-Krastanov and droplet epitaxy growth modes
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Stranski-Krastanov 生长模式和液滴外延生长模式生长的盖帽 GaSb 纳米结构之间的结构差异
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Millunchick
中科院分区：
文献类型：
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作者：
M. Dejarld;Lifan Yan;M. Luengo;V. Sih;J. Millunchick
液滴外延（DE）已经作为用于外延纳米结构形成的方法而出现作为Sttranski-Krastanov（SK）的替代。我们发现这两种方法之间的GaAs嵌入类似大小的纳米结构的显着结构差异。原子力显微镜和原子探针断层扫描测量显示，无帽和加盖SK结构彼此相似。然而，DE纳米结构在形貌上看起来像环，但在组成上是量子点。无论生长方法如何，GaSb润湿层都存在，并且具有几乎相同的Sb浓度分布。DE纳米结构被证明具有较低的Sb浓度，透射电子显微镜测量显示，它们在覆盖层上产生较少的应变。尽管有显着的结构差异，SK和DE纳米结构表现出相同的光致发光响应，这表明发射是从一个共享的功能，如润湿层，而不是纳米结构。
Droplet epitaxy (DE) has emerged as an alternative to Stranski-Krastanov (SK) as a method for epitaxial nanostructure formation. We find significant structural differences of similar sized nanostructures embedded in GaAs between the two methods. Atomic force microscopy and atom probe tomography measurements reveal that uncapped and capped SK structures resemble each other. However, the DE nanostructures appear as rings topographically but are quantum dots compositionally. A GaSb wetting layer is present regardless of the growth method and shares a nearly identical Sb concentration profile. DE nanostructures are shown to have a lower Sb concentration, and transmission electron microscopy measurements reveal that they produce less strain on the capping layer. Despite significant structural differences, SK and DE nanostructures exhibit the same photoluminescence response, suggesting that the emission is from a shared feature such as the wetting layer, rather than the nanostructures.
影响因子：
4
作者：
Ep Erwin Smakman;J. Garleff;R. Young;M. Hayne;P. Rambabu;P. Koenraad
通讯作者：
Ep Erwin Smakman;J. Garleff;R. Young;M. Hayne;P. Rambabu;P. Koenraad
DOI：
10.1088/0022-3727/43/6/065402
发表时间：
2010-01
期刊：
Journal of Physics D: Applied Physics
影响因子：
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作者：
M. A. Kamarudin;M. Hayne;Q. Zhuang;O. Kolosov;T. Nuytten;V. Moshchalkov;F. Dinelli
通讯作者：
M. A. Kamarudin;M. Hayne;Q. Zhuang;O. Kolosov;T. Nuytten;V. Moshchalkov;F. Dinelli