Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
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DOI：
10.1063/1.4932148
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发表时间：
2015-10-07
影响因子：
3.2
通讯作者：
Raghavan, Srinivasan
中科院分区：
文献类型：
--
作者：
Mohan, Nagaboopathy;Manikant;Raghavan, Srinivasan
AlGaN/GaN高电子迁移率晶体管堆叠沉积在一个单一的生长平台上被用来比较最常见的过渡，AlN到GaN，用于集成GaN与Si的计划。这些过渡的效率的基础上线性渐变，阶梯渐变，夹层，和超晶格计划位错密度降低，应力管理，表面粗糙度，并最终流动性的二维气体进行评估。在沉积的500 nm GaN探针层中，所有这些转变导致总透射电子显微镜测量的位错密度为1至3 x 10（9）/cm（2），
AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 x 10(9)/cm(2) and