Theory of hydrogen in semiconductors
Theory of hydrogen in semiconductors
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半导体中的氢理论
DOI：
10.1098/rsta.1995.0007
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
R. Jones
中科院分区：
文献类型：
--
作者：
R. Jones
氢在半导体中表现出几种不同的效应。这些包括：中和浅层杂质；消除作为重组中心的深层国家；氧扩散的催化增强；过渡金属杂质电学特性的变化。本文描述了用于研究这些问题的基本理论方法，以及它们的主要结果和突出问题。
Hydrogen exhibits several distinct effects in semiconductors. These include: the neutralization of shallow impurities; the removal of deep states which act as recombination centres; the catalytic enhancement of oxygen diffusion; the change in the electrical characteristics of transition metal impurities. The basic theoretical methods that have been used to investigate these are described along with their principal results and outstanding problems.