Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition
Atmospheric-Pressure Synthesis of Atomically Smooth, Conformal, and Ultrathin Low-k Polymer Insulating Layers by Plasma-Initiated Chemical Vapor Deposition
复制标题
通过等离子体引发化学气相沉积在大气压下合成原子级光滑、保形和超薄低 k 聚合物绝缘层
DOI：
--
复制
发表时间：
2019
影响因子：
5
通讯作者：
N. Boscher
中科院分区：
文献类型：
--
作者：
Dominique Abessolo Ondo;François Loyer;F. Werner;R. Leturcq;P. Dale;N. Boscher
采用常压等离子体化学气相沉积(AP-PICVD)方法，以四种环状有机硅单体(两种有机环硅氧烷和两种有机环硅氮烷)为原料，直接合成了超薄低介电常数绝缘聚合物膜。超短等离子体脉冲(约100 ns)作为聚合引发剂，与长等离子体关闭时间(10ms)相结合，可形成具有良好绝缘性能的原子光滑的共形聚合物层。当薄膜厚度小于12 nm时，测得漏电流密度为10-9A·cm-2。由于在沉积过程中保持了单体的环状结构，因此获得了较低的介电常数。用1，3，5，7-tetramethyl-1，3，5，7-tetravinylcyclotrisiloxane制备的聚合物膜具有最低的介电常数(k=2.8)。本研究展示了通过改变单体键来改变沉积时聚合物层的介电常数的能力，即…
The straightforward synthesis of ultrathin low dielectric constant insulating polymer layers from four cyclic organosilicon monomers (i.e., two organocyclosiloxanes and two organocyclosilazanes) by atmospheric pressure plasma-initiated chemical vapor deposition (AP-PiCVD) is demonstrated. The combination of ultrashort plasma pulses (ca. 100 ns), as polymerization initiator, with long plasma off-times (10 ms), yields the formation of atomically smooth and conformal polymer layers with excellent insulating properties. Leakage current densities of 10–9 A cm–2 are measured for film thicknesses as low as 12 nm. Low dielectric constants are obtained because of the retention of the cyclic structure of the monomers during the deposition. The polymer layers prepared from 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotrisiloxane display the lowest dielectric constant (k = 2.8). The present study demonstrates the ability to vary the dielectric constant of as-deposited polymer layers by varying the monomer bonds, i.e., ...