Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon
Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon
复制标题
基于面内锯齿状磷烯纳米带的二维肖特基接触结构
DOI：
10.1016/j.orgel.2017.02.002
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发表时间：
2017-05-01
影响因子：
3.2
通讯作者：
Li, Shu-Shen
中科院分区：
文献类型：
--
作者：
Fan, Zhi-Qiang;Sun, Wei-Yu;Li, Shu-Shen
利用非平衡绿色函数方法和密度泛函理论研究了锯齿型磷烯纳米颗粒（ZPNR）肖特基接触结构的输运性质.计算结果表明，未钝化的ZPNR为金属态，氢钝化的ZPNR为半导体态。未钝化ZPNR和H钝化ZPNR的面内接触结构导致肖特基势垒的形成，这导致整流电流-电压特性。在0.3 ~ 0.5V偏压范围内，整流比（RR）可达10（3）。通过延长肖特基接触结构中H钝化ZPNR的长度，肖特基接触结构的电流降低，但整流比明显增大。当H钝化ZPNR的长度是未钝化ZPNR长度的四倍时，在0.3 V至0.5 V的偏置区域内，平均RR增加到10（6），最大RR在0.45 V时增加到10（7）。（C）2017 Elsevier B. V.版权所有。
We investigate the transport properties of Schottky contact structure based on zigzag phosphorene nanoribbon (ZPNR) by using the non-equilibrium Green's function formalism with density functional theory. The calculated band structures show the unpassivated ZPNR is metal and the H-passivated ZPNR is semiconductor. The in-plane contact structure of unpassivated ZPNR and H-passivated ZPNR leads to the formation of a Schottky barrier, which results in rectifying current-voltage characteristics. The rectification ratio (RR) can reach to 10(3) in the bias region from 0.3 V to 0.5 V. By extending the length of H-passivated ZPNR in Schottky contact structure, the currents of the Schottky contact structure are decreased, but the RR can be enlarged obviously. When the length of H-passivated ZPNR is four times than that of the unpassivated ZPNR, the average RR increases to 10(6) in the bias region from 0.3 V to 0.5 V and the maximal RR is boosted up to 10(7) at 0.45 V. (C) 2017 Elsevier B.V. All rights reserved.