The thermoelectric properties of In0.5Co4Sb12 − xGex alloys prepared by HPHT
The thermoelectric properties of In0.5Co4Sb12 − xGex alloys prepared by HPHT
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DOI：
10.1016/j.matlet.2011.10.035
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发表时间：
2012-02
影响因子：
3
通讯作者：
L. Deng;X. Jia;Taichao Su;K. Jie;Xiaowen Guo;Hong-an Ma
中科院分区：
文献类型：
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作者：
L. Deng;X. Jia;Taichao Su;K. Jie;Xiaowen Guo;Hong-an Ma
In-filled and Ge-doped skutterudites In0.5Co4Sb12−xGex(0.5≤x≤1) with bcc crystal structure have been prepared by the high pressure and high temperature (HPHT) method. The structure of In0.5Co4Sb12−xGexskutterudites was evaluated by means of X-ray diffraction. Seebeck coefficient, electrical resistivity, power factor and thermal conductivity were performed between room temperature and about 663K. We found that the absolute Seebeck coefficients of In0.5Co4Sb11Ge1increased with the increase of synthetic pressure, and the thermal conductivity decreased with the increase of synthetic pressure. Among the different Ge content samples which were prepared at 2.3GPa, In0.5Co4Sb11.5Ge0.5showed the highest power factor of 21.98μWcm−1K−2at 615K and the maximum figure of merit (ZT) value of 0.58 at 663K.
