Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain
Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain
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DOI：
10.1063/1.4974450
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发表时间：
2017-01
影响因子：
4
通讯作者：
H. Lee;E. Guo;Jeong Hun Kwak;Seung Hyun Hwang;K. Dörr;Jun Hee Lee;J. Jo
中科院分区：
文献类型：
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作者：
H. Lee;E. Guo;Jeong Hun Kwak;Seung Hyun Hwang;K. Dörr;Jun Hee Lee;J. Jo
通过在PMN-PT衬底上施加电场，控制了La0.7Sr0.3MnO3/ 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 （PMN-PT）衬底上PbZr0.2Ti0.8O3 （PZT）薄膜的四方性（c/a）。利用时间分辨微x射线衍射观察了PZT薄膜在不同双轴应变下的压电响应。当PZT薄膜的c/a比从1.051减小到1.056时，纵向压电系数d33从29.5 pm/V减小到14.9 pm/V。我们的研究结果表明，PZT薄膜的四边形在决定d33的过程中起着至关重要的作用，使用机电衬底的原位应变工程有助于排除薄膜厚度变化或衬底之间界面的外在影响。
The tetragonality (c/a) of a PbZr0.2Ti0.8O3 (PZT) thin film on La0.7Sr0.3MnO3/ 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.