Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 × 7 substrate
Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 × 7 substrate
复制标题
在 Si(1 1 1)-7 × 7 衬底上形成均匀的纳米级 Ge 岛
DOI：
10.1016/s0169-4332(01)00063-0
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发表时间：
2001
影响因子：
6.7
通讯作者：
Y. Shigeta
中科院分区：
文献类型：
--
作者：
K. Masuda;Y. Shigeta
We have reported the formation of uniform nanoscale Si islands (3.8nm in diameter) on a Si(111)-7×7 substrate by using the stable reconstructed structure on the substrate as a template. It is very interesting to use the template as a method of quantum dot formation. We have tried to form the uniform nanoscale island of Ge on the Si(111)-7×7 substrate at various growth conditions (substrate temperature and annealing temperature) and observed the size distribution of Ge islands with a scanning tunneling microscope (STM). The range of substrate and annealing temperatures were chosen between 300 and 400°C. And we succeeded in the formation of uniform Ge islands showing a rounded shape with a diameter of 3.8nm, when the Ge is deposited at 320°C and annealed at 360°C.
