Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy
Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy
复制标题
DOI：
10.1063/1.4884654
复制
发表时间：
2014-06-23
影响因子：
4
通讯作者：
Simmons, Michelle Y.
中科院分区：
文献类型：
--
作者：
Oberbeck, Lars;Reusch, Thilo C. G.;Simmons, Michelle Y.
我们展示了使用扫描隧道显微镜对埋在Si（001）表面下的单个磷原子和磷掺杂剂纳米结构的定位和成像。在Si（001）上采用扫描隧道显微镜光刻技术自下而上制备了掩埋掺杂剂纳米结构。我们发现，目前的成像隧道光谱适合于在室温下，并与残留的表面粗糙度存在的定位和图像掩埋的纳米结构。从这些研究中，我们可以放置在封装与低温硅分子束外延的横向扩散的上限。(C)2014年作者。除非另有说明，否则所有文章内容均根据Creative Commons Attribution 3.0 Unported License许可。
We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.