Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics
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DOI:
10.1007/s10854-014-2018-8
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发表时间:
2014-05
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
Jingjing Wang;Jianfeng Zhu;Yong Zhou;Fen Wang
Jingjing Wang;Jianfeng Zhu;Yong Zhou;Fen Wang
中科院分区:
其他
文献类型:
--
作者:
Jingjing Wang;Jianfeng Zhu;Yong Zhou;Fen Wang

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The ZnO-based linear resistance ceramics doped with rare-earth oxides (Y2O3, La2O3) have been prepared by the conventional ceramics method. The effect of the different doping amounts of rare-earth oxides on the microstructure, electrical properties and aging behavior were investigated in detail. The electrical properties analysis shows that the La2O3addition on ZnO-based linear resistance ceramics has more obviously influence than the addition of Y2O3. The samples with the La2O3content of 0.25 mol% sintered at 1,320 °C exhibits excellent electrical properties with the resistivity of 253.5 Ω cm and the resistance temperature coefficient of 3.62 × 10−4/ °C, which are improved by 60 and 90 %, respectively. The nonlinear coefficient of voltage decreases to 1.16, decreases by 4.3 % and the stability of −1.2 % in the variation rate of the resistivity for aging temperature.