On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz
On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz
复制标题
高达 170 GHz 的硅有源和无源器件的晶圆上 S 参数去嵌入
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
S. Voinigescu
中科院分区：
文献类型：
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作者：
K. Yau;I. Sarkas;A. Tomkins;P. Chevalier;S. Voinigescu
本文首次比较了直流至170 GHz范围内硅有源和无源器件的晶片上表征的开短、穿断和TRL去嵌入技术。使用变压器，电容器，65纳米mosfet和SiGe hbt证明，如果开放和短假人被设计为在170GHz内保持集中，那么三种去嵌入技术之间几乎没有区别。针对具有串联接地电感的晶体管测试结构，提出了一种新的TRL +短嵌入方法。
This paper compares for the first time open-short, split-through, and TRL de-embedding techniques for on-wafer characterization of silicon active and passive devices in the DC to 170 GHz range. It is demonstrated using transformers, capacitors, 65 nm MOSFETs and SiGe HBTs that, if the open and short dummies are designed to remain lumped through 170GHz, there is almost no difference between the three de-embedding techniques. For transistor test structures with series ground inductance, a new TRL + short de-embedding method is proposed.