Superconducting state in a gallium-doped germanium layer at low temperatures.
Superconducting state in a gallium-doped germanium layer at low temperatures.
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DOI：
10.1103/physrevlett.102.217003
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发表时间：
2009-05
影响因子：
8.6
通讯作者：
T. Herrmannsdörfer;V. Heera;O. Ignatchik;M. Uhlarz;A. Mücklich;M. Posselt;H. Reuther;B. Schmidt;K. Heinig;W. Skorupa;M. Voelskow;C. Wündisch;R. Skrotzki;M. Helm;J. Wosnitza
中科院分区：
文献类型：
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作者：
T. Herrmannsdörfer;V. Heera;O. Ignatchik;M. Uhlarz;A. Mücklich;M. Posselt;H. Reuther;B. Schmidt;K. Heinig;W. Skorupa;M. Voelskow;C. Wündisch;R. Skrotzki;M. Helm;J. Wosnitza
我们证明了第三元素族-IV半导体，锗，在环境压力下表现出超导性。使用先进的掺杂和退火技术的国家的最先进的半导体加工，我们已经制造了一个高度Ga掺杂的Ge（GeratioGa）层在近本征Ge。根据详细的退火条件，我们表明，超导性可以产生和定制的掺杂半导体Ge主机在温度高达0.5 K。临界场测量揭示了超导电性在约60 nm厚的GeratioGa层的准二维字符。GeratioGa中的库珀对密度似乎异常低。
We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing techniques of state-of-the-art semiconductor processing, we have fabricated a highly Ga-doped Ge (GeratioGa) layer in near-intrinsic Ge. Depending on the detailed annealing conditions, we demonstrate that superconductivity can be generated and tailored in the doped semiconducting Ge host at temperatures as high as 0.5 K. Critical-field measurements reveal the quasi-two-dimensional character of superconductivity in the approximately 60 nm thick GeratioGa layer. The Cooper-pair density in GeratioGa appears to be exceptionally low.