Effect of the surface treatment on the room-temperature bonding of Al to Si and SiO2
Effect of the surface treatment on the room-temperature bonding of Al to Si and SiO2
复制标题
表面处理对Al与Si和SiO2室温键合的影响
DOI：
10.1023/a:1004390923252
复制
发表时间：
1998
影响因子：
4.5
通讯作者：
T. Suga
中科院分区：
文献类型：
--
作者：
N. Hosoda;Y. Kyogoku;T. Suga
采用表面活化键合法在室温下将多晶Al与Si（100）和SiO2（熔融石英）进行键合。在目前的工作中，使用不同的表面活化手段，如照射的氩快原子束（FAB）和氢自由基束（RB）。研究了快原子辐照活化表面暴露于真空气氛对键合行为的影响。经FAB溅射清洗后的Al-Si连接接头强度达到32 MPa。当活化表面暴露于30 L（L是朗缪尔（1.33×10- 4Pa·s）的缩写）的残余气体（主要是蒸汽）中时，Al-Si接头的强度下降到20 MPa，接近Al-SiO2接头的强度。这表明，具有OH基团和氧化物中间层的Al和Si的接头的断裂强度接近于Al和Si氧化物的断裂强度。Al和Si之间的附着力强烈恶化，因为氢终止在Si表面已被氢RB辐照。与此相反，硅与天然氧化物的Al键合是成功的与氢RB照射。
Bonding of polycrystalline Al to Si(1 0 0) and SiO2 (fused silica) was carried out at room temperature by means of surface-activated bonding method. In the present work, different means of surface activation such as irradiation of an argon fast atom beam (FAB) and a hydrogen radical beam (RB) were used. Influence of the exposure to a vacuum atmosphere of the activated surfaces by fast atom irradiation on the bonding behaviour was investigated. The strength of the Al–Si joints sputter cleaned by FAB before bonding reaches as much as 32 MPa. When the activated surfaces were exposed to 30 L (where L is the abbreviation for langmuir (1.33×10-4 Pa s)) in the residual gases (mainly vapour), the strength of the Al–Si joint decreased to 20 MPa and approached that of the Al–SiO2 joint. This indicates that the fracture strength of the joint of Al and Si with an intermediate layer of OH groups and oxide is close to that of Al and Si oxide. The adhesion between Al and Si deteriorated strongly because of hydrogen termination on the Si surface which had been irradiated by the hydrogen RB. On the contrary, bonding of Si with native oxides to Al was successful with the hydrogen RB irradiation.