Fractionalized topological insulators
Fractionalized topological insulators
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DOI：
10.1038/nphys3311
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发表时间：
2015-05-01
期刊：
影响因子：
19.6
通讯作者：
Fiete, Gregory A.
中科院分区：
文献类型：
--
作者：
Maciejko, Joseph;Fiete, Gregory A.
拓扑绝缘体已经成为凝聚态物理研究的一个重要课题，并提出了一些新的应用。虽然现在已经有许多实验证明了这类材料的存在，但它们都可以用基于电子能带结构的理论来描述，这意味着它们不具有足够强的电子相关性来从根本上改变这种理论描述。在这里，我们回顾了最近的理论进展中描述的一类强相关的拓扑绝缘体-分数拓扑绝缘体-带理论失败，由于电子到其他自由度的分数。
Topological insulators have emerged as a major topic of condensed matter physics research, with several novel applications proposed. Although there are now a number of established experimental examples of materials in this class, all of them can be described by theories based on electronic band structure, which implies that they do not possess electronic correlations strong enough to fundamentally change this theoretical description. Here, we review recent theoretical progress in the description of a class of strongly correlated topological insulators-fractionalized topological insulators-where band theory fails owing to the fractionalization of the electron into other degrees of freedom.