Particle modelling of inductively-coupled argon plasmas with wafer biasing
Particle modelling of inductively-coupled argon plasmas with wafer biasing
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DOI：
10.1088/0022-3727/38/18/022
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发表时间：
2005-09
期刊：
影响因子：
--
通讯作者：
H. Takekida;K. Nanbu
中科院分区：
文献类型：
--
作者：
H. Takekida;K. Nanbu
用粒子模拟蒙特卡罗方法研究了轴对称电感耦合氩等离子体在晶片偏压下的特性。模拟是在气压固定在5 mTorr且功率沉积在200 W的条件下进行的。研究了偏置频率和偏置电压对入射到硅片上的离子的通量和能量分布的影响。偏置频率和偏置电压分别从2 MHz变化到13.56 MHz和从100 V变化到300 V。等离子体结构在很大程度上受晶片偏压的影响。离子能量分布强烈地依赖于偏置频率、偏置电压和鞘层厚度。降低偏置频率可以改善离子束流的均匀性。这些结果与以前的理论是一致的。
The characteristics of axisymmetrical inductively-coupled argon plasmas with wafer biasing are examined using the particle-in-cell Monte Carlo method. The simulation is performed on the condition that gas pressure is fixed at 5 mTorr and power deposition is at 200 W. The effects of bias frequency and bias voltage on the distributions of flux and energy of the ions that are incident onto the wafer are investigated. The bias frequency and bias voltage are changed from 2 MHz to 13.56 MHz and 100 V to 300 V, respectively. The plasma structure is largely influenced by the wafer biasing. The ion energy distribution strongly depends on the bias frequency, bias voltage and sheath thickness. Decreasing the bias frequency results in the improvement of the uniformity of ion flux. These results are consistent with the previous theory.