Determination of the optimum annealing temperature and time for Indium-doped SnO2 films to achieve the best p-type conductive property
Determination of the optimum annealing temperature and time for Indium-doped SnO2 films to achieve the best p-type conductive property
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DOI：
10.1016/j.jallcom.2016.11.276
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发表时间：
2017-03
影响因子：
6.2
通讯作者：
T. Le;H. Dang;V. H. Le
中科院分区：
文献类型：
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作者：
T. Le;H. Dang;V. H. Le
本报告主要研究和制备In掺杂的SnO 2（TIO）薄膜的不同沉积和退火温度。采用直流磁控溅射法在石英玻璃衬底上制备了TiO薄膜。这些优选的SnO 2（101）和（211）反射由于在SnO 2主晶格中Sn被In取代而变得占主导地位。用X射线光电子能谱（XPS）记录了In在TiO薄膜中的价态。p型导电性能的最低温度为400 °C，最佳退火温度为550 °C，退火时间为2 h，其电阻率、空穴浓度和迁移率分别为0.68 Ω cm、1.13 × 1018 cm −3和8.13 cm 2 V − 1 s −1。薄膜的平均透过率在85%以上。用扫描电子显微镜（SEM）观察了晶粒的形状和大小。在室温下的光致发光光谱的带隙中的In 3+状态的存在下被确定。整流特性揭示了p-TIO/n-Si异质结二极管的行为。
This report focuses on studying and fabricating In-doped SnO2(TIO) films following various depositing and annealing temperatures. TIO films were deposited on quartz glass substrates using a direct current (DC) magnetron sputtering method. These preferred SnO2(101) and (211) reflections became dominant due to the substitution of Sn by In in the SnO2host lattice. The valence state of In existing in TIO film was recorded using X-ray photoelectron spectroscopy (XPS). The p-type conductive property was found at a minimum temperature of 400 °C, and the best conductivity was achieved at the optimum annealing temperature of 550 °C for 2 h with resistivity, hole concentration, and mobility of 0.68 Ω cm, 1.13 × 1018cm−3, and 8.13 cm2V−1s−1, respectively. Furthermore, the average transmittance of the films was above 85%. Grain shape and size were observed by scanning electron microscopy (SEM). The existence of the In3+state in the band gap was identified using photoluminescence spectra at room temperature. The rectified characterisation revealed the behaviour of a p-TIO/n-Si heterojunction diode.