High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization
High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization
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通过抑制场增强电子离域的高性能 InP 基量子点发光二极管
DOI：
10.1002/adfm.202204529
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发表时间：
2022-07-13
影响因子：
19
通讯作者：
Du, Zuliang
中科院分区：
文献类型：
--
作者：
Li, Haiyang;Bian, Yangyang;Du, Zuliang
为了了解由于INP基于INP的量子点发光二极管（QLEDS）的电子离域而引起的激子动力学，激子动力学通过在INP基于INP的QLED中系统地控制，通过改变INP/ZNSE量子点（QDS）的壳厚度（QD）和有效电场（e-e-field（e-e-Field）的壳体厚度，跨e-efield（e-e-field）。发现随着壳厚度的增加，无独立的能量转移有效地抑制。但是，具有较厚壳的INP/ZNSE QD仅在抑制电子传输层或工作设备上膜中的田间增强电子定位引起的激子转移方面的益处有限。场辅助激子传输主要由INP/ZNSE QD中的大型电子场和实地增强电子离域驱动。通过降低有效的电子场（在2 V偏见），在INP基于INP的QLED中实现了22.56％的外部量子效率。由于超厚的壳抑制了场增强的电子离域化，因此以7.2 V的较大偏置达到136 090 CD/M（-2）的突破亮度。
To understand the exciton dynamics due to the electron delocalization in InP-based quantum dot light-emitting diodes (QLEDs), the exciton dynamics are systematically controlled in InP-based QLEDs through varying the shell thicknesses of InP/ZnSe quantum dots (QDs) and the effective electrical field (E-field) across the QDs. It is found that the field-independent energy transfer is effectively suppressed as the shell thickness increases. However, InP/ZnSe QDs with thicker shells only have limited benefit for suppressing the exciton transfer due to field-enhanced electron delocalization in films on electron transport layers or working devices. The field-assisted exciton transfer is mainly driven by the large E-field and field-enhanced electron delocalization in InP/ZnSe QDs. External quantum efficiency of 22.56% is achieved in InP-based QLEDs by reducing the effective E-field (at 2 V bias). The breakthrough luminance of 136 090 cd/m(-2) is achieved at a large bias of 7.2 V, due to the suppression of field-enhanced electron delocalization by the ultra-thick shell.