Near-Field Scanning Optical Microscopy of Quantum Dot Arrays

Near-Field Scanning Optical Microscopy of Quantum Dot Arrays
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量子点阵列的近场扫描光学显微镜

DOI：
10.1143/jjap.41.2668
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
Y. Aoyagi
Y. Aoyagi
中科院分区：
--
文献类型：
--
作者：
S. Nomura;K. Matsuda;T. Saiki;Y. Aoyagi

文献摘要

被引文献

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报道了用近场扫描光学显微镜（NSOM）测量n型砷化镓量子点阵列。单色光致发光（PL）图像清晰地显示了PL强度的周期性分布。得到的图像表明，在高电子密度区域，通过自洽计算得到了高的PL强度。这直接表明形成了由表面栅结构定义的局域电子密度分布，表明NSOM-PL测量是研究半导体纳米结构中电子态的有力工具。
Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.