Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation
Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+-implantation-assisted oxidation
复制标题
通过 H 注入辅助氧化增强超薄绝缘体上 SiGe 的应力松弛
DOI：
10.1063/1.1935028
复制
发表时间：
2005
影响因子：
4
通讯作者：
T. Enokida
中科院分区：
文献类型：
--
作者：
T. Sadoh;Ryo Matsuura;M. Miyao;M. Ninomiya;M. Nakamae;T. Enokida
研究了H+注入(⩽5×1016 cm−2)对氧化诱导Ge冷凝法制备应力松弛超薄(∼30 nm)SiGe绝缘虚拟衬底中应力松弛的影响。高剂量(⩾1015 cm−2)注入增强了应力松弛，这归因于SiGe/埋层SiO_2界面的键断裂。然而，由于辐照缺陷的存在，氧化速度也有所提高。为了消除辐照缺陷，提出了氧化前的两步退火(500 °C 30min和850 °C 60min)。这在不改变氧化速度的情况下实现了超薄SGOI的应力松弛增强。
Effects of H+ implantation (⩽5×1016cm−2) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin (∼30nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose (⩾1015cm−2) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGe∕buriedSiO2 interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 °C for 30 min and 850 °C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.
影响因子：
3.2
作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons
通讯作者：
S. Takagi;J. Hoyt;J. Welser;J. Gibbons