X-$\gamma$ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
X-$\gamma$ Ray Spectroscopy With Semi-Insulating 4H-Silicon Carbide
复制标题
半绝缘 4H 碳化硅的 X-$gamma$ 射线光谱
DOI：
--
复制
发表时间：
2013
影响因子：
1.8
通讯作者：
C. Lanzieri
中科院分区：
文献类型：
--
作者：
G. Bertuccio;D. Puglisi;A. Pullia;C. Lanzieri
半绝缘（SI）4 H碳化硅（SiC）晶片上的辐射探测器已被制造并用8-59 keV范围内的X和γ光子表征。探测器为直径为400 μ m的圆形Ni-SiC结，位于厚度为70 μm的Si 4 H-SiC晶片上。在+20<sup>°</sup> C和+104<sup>°</sup> C温度下，在7 kV/cm的内电场下测得暗电流密度分别为3.5nA/cm<sup>2</sup>和0.3 μA / cm<sup>2</sup>。在室温下获得了<sup>241</sup>Am的X- γ谱，脉冲谱线宽度为756 eV半高宽。在不同的实验条件下测量了电荷收集效率（CCE），在室温下最大CCE = 75%。观察到了极化效应，并测量和分析了CCE随时间和温度的变化关系。室温下的电荷俘获可用Hecht模型描述，最大总平均漂移长度为107 μm。
Radiation detectors on a semi-insulating (SI) 4H silicon carbide (SiC) wafer have been manufactured and characterized with X and γ photons in the range 8-59 keV. The detectors were 400-μm-diameter circular Ni-SiC junctions on an SI 4H-SiC wafer thinned to 70 μm. Dark current densities of 3.5 nA/cm<sup>2</sup> at +20<sup>°</sup>C and 0.3 μA / cm<sup>2</sup> at +104<sup>°</sup>C with an internal electric field of 7 kV/cm have been measured. X- γ ray spectra from <sup>241</sup>Am have been acquired at room temperature with pulser line width of 756 eV FWHM. The charge collection efficiency (CCE) has been measured under different experimental conditions with a maximum CCE = 75% at room temperature. Polarization effects have been observed, and the dependence of CCE on time and temperature has been measured and analyzed. The charge trapping has been described by the Hecht model with a maximum total mean drift length of 107 μm at room temperature.