Threading dislocation induced low frequency noise in strained-Si nMOSFETs
Threading dislocation induced low frequency noise in strained-Si nMOSFETs
复制标题
DOI：
10.1109/led.2005.853672
复制
发表时间：
2005-09-01
影响因子：
4.9
通讯作者：
Liu, CW
中科院分区：
文献类型：
--
作者：
Hua, WC;Lee, MH;Liu, CW
利用不同尺寸的应变硅场效应晶体管，研究了穿透位错与低频噪声特性之间的关系。应变硅器件与对照硅器件的S-VG（栅参考电压噪声的功率谱密度）比值由几何平均值得到，其与器件面积的关系可以用泊松分布的穿线位错的过剩陷阱的载流子数涨落模型来理解。对于应变Si器件，从面积相关的S-VG比中提取的每个穿透位错的等效陷阱数类似于85，并且对于器件面积为625 μ m（2）的应变Si器件，这导致类似于4.2倍的S-VG退化。
The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent S-VG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent S-VG ratios is similar to 85 for the strained-Si devices, and which results in similar to 4.2X degradation of the S-VG for the strained-Si device with the device area of 625 mu m(2).