Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
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DOI：
10.1016/j.tsf.2011.08.037
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发表时间：
2012-05-01
期刊：
影响因子：
2.1
通讯作者：
Fanciulli, M.
中科院分区：
文献类型：
--
作者：
Mantovan, R.;Vangelista, S.;Fanciulli, M.
磁性隧道结，即由磁性隧道氧化物阻挡层分隔的两个铁磁电极的组合，是各种基于自旋的器件中的核心元件。我们报告使用相结合的化学气相和原子层沉积工艺的磁性隧道结的合成没有真空破坏。选定的铁磁和氧化层的结构，化学和形态特征的报告，连同隧道磁阻效应的证据图案化的Fe/MgO/Co结。(C)2011爱思唯尔有限公司版权所有。
Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions. (C) 2011 Elsevier B.V. All rights reserved.