Epitaxial diamond growth on sapphire in an oxidizing environment
Epitaxial diamond growth on sapphire in an oxidizing environment
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DOI：
10.1038/20653
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发表时间：
1999-05
期刊：
影响因子：
64.8
通讯作者：
M. Yoshimoto;Kenji Yoshida;H. Maruta;Yoshiko Hishitani;H. Koinuma;S. Nishio;M. Kakihana;T. Tachibana
中科院分区：
文献类型：
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作者：
M. Yoshimoto;Kenji Yoshida;H. Maruta;Yoshiko Hishitani;H. Koinuma;S. Nishio;M. Kakihana;T. Tachibana
金刚石薄膜在硬质涂层、电子设备散热器和微型真空二极管等技术应用中具有重要意义。它们通常通过化学气相沉积法生产，原子氢的存在被认为对于金刚石晶体的生长至关重要。一些研究声称金刚石薄膜是在无氢环境中生长的，但是对于这些情况下的生长条件仍然存在疑问。在这里，我们报告了在无氢、纯氧环境中通过气相沉积形成金刚石的成核和生长，以形成在单晶蓝宝石基板上异质外延排列的晶体。换句话说，我们能够在碳的氧化“蚀刻”必须与其沉积竞争的条件下实现钻石的生长。通过选择一个温度范围，使非金刚石（石墨）碳物质优先氧化为金刚石碳物质，我们就能够实现金刚石的积累。
Thin films of diamond are of interest for technological applications such as hard coatings, heat sinks in electronic devices and miniaturized vacuum diodes,,,. They are typically produced by chemical vapour deposition, and the presence of atomic hydrogen has been considered crucial for the growth of the diamond crystals,,,,. Some studies have claimed diamond film growth in a hydrogen-free environment,,,, but questions remained about the growth conditions in those cases. Here we report the nucleation and growth of diamond by vapour deposition in a hydrogen-free, pure oxygen environment to form crystals that are heteroepitaxially aligned on a single-crystal sapphire substrate. In other words, we are able to achieve diamond growth under conditions where the oxidative ‘etching’ of carbon must compete with its deposition. By choosing a temperature range that results in preferential oxidation of non-diamond (graphitic) carbon species to that of diamond, we are able to achieve the accumulation of diamond.