Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
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DOI：
10.1143/jjap.44.l696
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发表时间：
2005-05
影响因子：
1.5
通讯作者：
A. Ueta;S. Gozu;K. Akahane;N. Yamamoto;N. Ohtani
中科院分区：
文献类型：
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作者：
A. Ueta;S. Gozu;K. Akahane;N. Yamamoto;N. Ohtani
引入周期性供应外延，研究了InAsSb量子点（QDs）。InAsSb量子点的光致发光光谱在室温下也显示出强发射。周期性供应外延的InAsSb量子点可以控制光纤通信系统的发射波长。在不改变发射波长的情况下，可以控制InAsSb量子点密度在4.5 ×109 ~ 3.5 ×1010 cm-2范围内。这些结果表明，周期供应外延是一种有用的技术，用于各种光学器件，如量子点激光器和单光子发射器。
InAsSb quantum dots (QDs) were studied by introducing periodic supply epitaxy. Photoluminescence spectra from InAsSb QDs showed strong emissions even at room temperature. The InAsSb QDs by periodic supply epitaxy allowed the control of emission wavelengths of optical fiber communication systems. The control of the density of InAsSb QDs in the range from 4.5 ×109 to 3.5 ×1010 cm-2 without changing emission wavelengths was demonstrated. These results indicate that periodic supply epitaxy is a useful technique for various optical devices such as QD lasers and single photon emitters.