Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices
Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices
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DOI：
10.1109/led.2017.2771148
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发表时间：
2018
影响因子：
4.9
通讯作者：
Peter A. Butler;W. M. Waller;M. Uren;A. Allerman;A. Armstrong;R. Kaplar;Martin Kuball
中科院分区：
文献类型：
--
作者：
Peter A. Butler;W. M. Waller;M. Uren;A. Allerman;A. Armstrong;R. Kaplar;Martin Kuball
我们测量了超宽带隙Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N异质结中载流子迁移率与电子密度的关系，只使用Au/Pt肖特基接触沉积，而不需要欧姆接触。利用这种技术，我们测量了AlGaN/AlGaN异质结在1010至1013 cm−2的二维电子气密度范围内的迁移率。在室温下，亚阈值迁移率为4 cm 2/Vs，峰值迁移率为155 cm 2/Vs。峰值迁移率随温度降低，T-0.86，表明合金散射是主要的散射机制。
We measure the electron density dependence of carrier mobility in ultra-wide bandgap Al0.85Ga0.15N/Al0.7Ga0.3N heterostructures, using only Au/Pt Schottky contact deposition and without the need for Ohmic contacts. With this technique, we measure mobility over a two-dimensional electron gas density range from 1010 to 1013 cm−2 at an AlGaN/AlGaN heterojunction. At room temperature, subthreshold mobility was 4 cm2/Vs and peak mobility 155 cm2/Vs. Peak mobility decreased with temperature as T−0.86 suggesting alloy scattering as the dominant scattering mechanism.