Low-Noise Analog ASIC for Silicon and CdTe Sensors

Low-Noise Analog ASIC for Silicon and CdTe Sensors
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适用于硅和 CdTe 传感器的低噪声模拟 ASIC

DOI:
10.1109/tns.2010.2063038
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发表时间:
2010
影响因子:
1.8
通讯作者:
Y. Mito
Y. Mito
中科院分区:
工程技术3区
文献类型:
--
作者:
T. Kishishita;G. Sato;H. Ikeda;T. Takahashi;T. Kiyuna;Y. Mito

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本文介绍了一种用于硬X射线和γ射线探测器的32通道低噪声模拟前端专用集成电路“KW 03”的最新研制成果。ASIC的目的是利用硅和碲化镉(CdTe)作为探测器材料读出条带或像素(焊盘)探测器。每个读出通道包括一个电荷敏感放大器,带通滤波器和采样保持电路。它还包括漏电流补偿和零极点消除电路,以满足各种检测器的要求。典型通道的等效噪声电平达到89 e-@0 pF(rms),在0 pF和10 pF之间的输入电容特性为7.5 e-/pF,每个通道的功耗为3 mW。我们将ASIC安装在低温共烧陶瓷(LTCC)封装上,并结合CdTe二极管探测器评估光谱性能。在-20 ° C时,对59.5keV的γ射线,获得了241 Am的γ射线能谱,能量分辨率为2.23keV(FWHM)。
We report on the recent development of a 32-channel low-noise analog front-end ASIC "KW03" for hard X-ray and gamma-ray detectors. The ASIC aims for the readout of strip or pixel (pad) detectors utilizing silicon and cadmium telluride (CdTe) as detector materials. Each readout channel includes a charge-sensitive amplifier, bandpass filters and a sample-and-hold circuit. It also includes a leakage current compensation and pole-zero cancellation circuits to meet the various detector requirements. The equivalent noise level of a typical channel reaches 89 e- @ 0 pF (rms) and shows an input-capacitance characteristic of 7.5 e-/pF between 0 pF and 10 pF with a power consumption of 3 mW per channel. We mounted the ASIC on a low-temperature co-fired ceramic (LTCC) package and evaluated the spectral performance by combining with a CdTe diode detector. As a result, the gamma-ray spectrum of radioactive source 241 Am was obtained with a good energy resolution of 2.23 keV (FWHM) for gamma rays of 59.5 keV at -20°C.
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