Crystal growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals with different Nd concentrations
Crystal growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals with different Nd concentrations
复制标题
DOI：
10.1016/j.optmat.2011.01.026
复制
发表时间：
2011-04
影响因子：
3.9
通讯作者：
M. Sugiyama;Y. Fujimoto;T. Yanagida;Y. Yokota;J. Pejchal;Y. Furuya;Hidehiko Tanaka;A. Yoshikawa
中科院分区：
文献类型：
--
作者：
M. Sugiyama;Y. Fujimoto;T. Yanagida;Y. Yokota;J. Pejchal;Y. Furuya;Hidehiko Tanaka;A. Yoshikawa
采用微下拉(μ-PD)法在氮气气氛中生长了Nd 0.1%、0.5%、1%和3%掺杂的Lu3Al5O12(Nd:LuAG)单晶。通过粉末 XRD 分析证实生长的晶体具有单相。在吸收光谱中，观察到一些由 Nd3+4f-4f 跃迁引起的弱吸收线，并且其强度随着 Nd 浓度的增加而增加。当受到 241Am α 射线激发时，在 320nm 处观察到由于主晶格缺陷而产生的宽发射峰，以及在波长大于 400nm 时由于 Nd3+4f-4f 跃迁而产生的一些锐线。每个样品在 γ 射线激发下的 Nd:LuAG 衰减时间曲线可以很好地近似为 340-760ns 和 3-5μs 的两个指数函数。通过使用 137Cs、Nd 0.5%:LuAG 进行脉冲高度测量，显示出最高的光产额，为 7600±760 光子/MeV。
Nd 0.1%, 0.5%, 1% and 3% doped Lu3Al5O12(Nd:LuAG) single crystals were grown in the nitrogen atmosphere by the micro-pulling down (μ-PD) method. The grown crystals had a single-phase confirmed by powder XRD analysis. In absorption spectra, some weak absorption lines due to Nd3+4f–4f transitions were observed and their intensity increased with the increase of Nd concentration. When excited by241Am α-ray, a broad emission peak due to defects in the host lattice at 320nm and some sharp lines due to Nd3+4f–4f transitions at wavelength longer than 400nm were observed. The decay time profiles of Nd:LuAG under γ-ray excitation were well approximated by two exponential function of 340–760ns and 3–5μs for each sample. By pulse height measurement using137Cs, Nd 0.5%:LuAG showed the highest light yield of 7600±760 photons/MeV.