Fluid pressure and its effects on chemical mechanical polishing
Fluid pressure and its effects on chemical mechanical polishing
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DOI：
10.1016/s0043-1648(02)00155-2
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发表时间：
2002-08
期刊：
影响因子：
5
通讯作者：
Chunhong Zhou;Lei Shan;J. Hight;S. Ng;S. Danyluk
中科院分区：
文献类型：
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作者：
Chunhong Zhou;Lei Shan;J. Hight;S. Ng;S. Danyluk
给出了抛光过程中界面流体压力和摩擦测量的实验结果，以及它们对一些主要工艺变量的依赖性。在模拟条件下，观察到低于环境的流体压力，其大小与施加的抛光负载具有相同的数量级。由于该流体压力分布不均匀，因此通过结合施加的负载和流体压力的影响而获得的接触应力在整个晶片上不均匀，并且将导致材料去除不均匀。研究了流体压力存在的机制，并开发了分析模型来预测该流体压力的大小和分布。使用热生长二氧化硅在直径 100 毫米的 p 型 (100) 单晶硅晶片上测试低于环境流体压力对材料去除率和轮廓的影响。抛光实验显示了低于环境的流体压力对抛光速率和轮廓的影响。
The experimental results of interfacial fluid pressure and friction measurements during polishing are presented, as well as their dependence on some major process variables. Under simulated conditions, a sub-ambient fluid pressure was observed, and its magnitude was of the same order of magnitude as the applied polishing load. Since this fluid pressure is non-uniformly distributed, the contact stress, obtained by combining the effects of both applied load and the fluid pressure, is not uniform across the wafer and will result in non-uniform material removal. The mechanism of the presence of the fluid pressure was investigated, and an analytical model was developed to predict the magnitude and distribution of this fluid pressure. The effects of the sub-ambient fluid pressure on material removal rate and profile were tested with thermally grown silicon dioxide on 100mm diameter, p-type (100), single-crystal silicon wafers. The polishing experiments show the effect of sub-ambient fluid pressure on polishing rate and profile.