Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition
Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition
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DOI：
10.1088/1361-648x/ac6309
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Song Liu
中科院分区：
文献类型：
--
作者：
Yizhang Ren;Ling Zhang;Xukun Zhu;Huimin Li;Qizhi Dong;Song Liu
Abstract. Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.
