Review and Reexamination of Reliability Effects Related to NBTI-Induced Statistical Variations
Review and Reexamination of Reliability Effects Related to NBTI-Induced Statistical Variations
复制标题
与 NBTI 引起的统计变化相关的可靠性影响的审查和重新检查
DOI：
10.1109/tdmr.2007.910437
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发表时间：
2007
影响因子：
2
通讯作者：
Stewart E. Rauch
中科院分区：
文献类型：
--
作者：
Stewart E. Rauch
负偏压温度不稳定性（NBTI）机制改变了应力下PFET分布的均值和方差。这种效应对平衡模拟电路（例如，电流镜、差分对等），以及SRAM单元稳定性。本文简要回顾了迄今为止对NBTI引起的变化的统计和影响的理解和模型。其次是严格审查的实际NBTI引起的分布和准确性的正态近似已被使用到目前为止。
It is now well established that the negative bias temperature instability (NBTI) mechanism alters both the mean and variance of the distribution of the PFET under stress. This effect has reliability implications to balanced analog circuits (e.g., current mirrors, differential pairs, etc.), as well as to SRAM cell stability. This paper presents a brief review of the understanding and models to date of the statistics and impacts of the NBTI-induced variation. This is followed by a critical examination of the actual NBTI-induced distributions and the accuracy of the normal approximations that have been used to date.