The effect of annealing conditions on the crystallization of Er-Si-O formed by solid phase reaction
The effect of annealing conditions on the crystallization of Er-Si-O formed by solid phase reaction
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DOI：
10.1016/j.optmat.2005.09.034
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发表时间：
2006-05
影响因子：
3.9
通讯作者：
K. Masaki;H. Isshiki;T. Kawaguchi;T. Kimura
中科院分区：
文献类型：
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作者：
K. Masaki;H. Isshiki;T. Kawaguchi;T. Kimura
Er-Si-O晶体是一种很有前途的硅基光电子器件材料。Er-Si-O的晶化是通过含有Er-O和Si-O键的非晶预制体的固相反应获得的。但详细的结晶机理尚不清楚。本研究报告，在结晶退火过程中控制样品的氧含量影响Er-Si-O晶体的精细排列，导致三种不同类型的XRD图案和相应的不同的PL光谱精细结构。采用溶胶-凝胶法制备了非晶预制体。然后将样品在Ar中在1250°C下退火以用于Er-Si-O晶体的固相生长。然而，所获得的Er-Si-O晶体显示出一些不同类型的XRD图案和PL光谱。据推测，退火炉中的少量残余氧影响了Er-Si-O晶体结构。为了研究氧的影响，在固相生长期间，应用三个过程;在样品上放置Si帽以减少气氛的影响，另外在覆盖有Si帽和没有Si帽的样品上放置碳片作为吸氧剂。观察到了三种不同的X射线衍射图、PL谱精细结构、PLE谱和PL时间衰减。这些结果表明，Er-Si-O晶体的精细排列受晶体中氧含量的影响，而晶体中的氧含量对固相生长过程中退火气氛中的氧非常敏感，其性能来源于其独特的晶体结构。
Er–Si–O crystal is one of the promising materials for Si-based opto-electronic devices. Crystallization of Er–Si–O is obtained by solid phase reaction of an amorphous preform which contains Er–O and Si–O bonds. However detailed crystallization mechanism is not clear. This study reports that the control of oxygen content of the sample in the annealing process for crystallization affects the fine arrangements of Er–Si–O crystals, resulting in three different types of XRD patterns and correspondingly different PL spectrum fine structures. The sol–gel method was used to prepare the amorphous preform. The samples were then annealed at 1250°C in Ar for the solid phase growth of Er–Si–O crystals. The obtained Er–Si–O crystals showed, however, some different types of XRD patterns and the PL spectra. It was speculated that a slight amount of residual oxygen in the annealing furnace affected the Er–Si–O crystal structure. To study the effect of oxygen, during solid phase growth three processes were applied; putting a Si cap on the sample to reduce the influence of the atmosphere, additionally putting a carbon sheet as oxygen getter on the sample covered with a Si cap and no Si capping. Three kinds of XRD patterns, PL spectrum fine structures, PLE spectra and PL time decays were observed, depending on the three processes. These results indicate that the fine arrangements of Er–Si–O crystals are affected by oxygen content in the crystal which is very sensitive to oxygen in the annealing Ar atmosphere during the solid phase growth and their properties are come from their particular crystalline structures.