Dinaphtho[1,2-b:2′,1′-d]chalcogenophenes: Comprehensive Investigation of the Effect of the Chalcogen Atoms in the Phenacene-Type π-Electronic Cores
Dinaphtho[1,2-b:2′,1′-d]chalcogenophenes: Comprehensive Investigation of the Effect of the Chalcogen Atoms in the Phenacene-Type π-Electronic Cores
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DOI：
10.1021/cm303376g
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发表时间：
2013-10-22
影响因子：
8.6
通讯作者：
Takeya, Jun
中科院分区：
文献类型：
--
作者：
Mitsui, Chikahiko;Okamoto, Toshihiro;Takeya, Jun
本文报道了一类新的高电位p型半导体化合物二萘并[1，2-B：2 '，1'-d]硫族苯。作为全面调查的结果，包括计算研究的基础上成功地确定了单晶结构的X射线分析，硫族元素原子的影响基本上表现在它们的分子轨道，晶体堆积结构，电荷传输性能，并在年底的设备性能。其中，二萘并[1，2-B：2 '，1'-d]噻吩和二萘并[1，2-B：2 '，1'-d]硒酚的空穴迁移率分别高达1.6和2.0 cm（2）V-1 s（-1），并且在其单晶有机场效应晶体管中I-on/I-off比高达10（4）-10（5）。这种高性能归因于硫族元素原子上的大轨道系数和硫族元素桥联的W形分子诱导的理想堆积结构。
We report dinaphtho[1,2-b:2',1'-d]-chalcogenophenes as a new class of highly potential p-type semiconductors. As the result of comprehensive investigations including computational studies based on single-crystal structures successfully determined by X-ray analysis, the impacts of the chalcogen atoms are substantially manifested in their molecular orbitals, crystal packing structures, charge-transporting properties, and the device performances at the end. Among them, dinaphtho[1,2-b:2',1'-d]thiophene and dinaphtho[1,2-b:2',1'-d]selenophene achieved a hole mobility of up to 1.6 and 2.0 cm(2) V-1 s(-1), respectively, accompanied by an I-on/I-off ratio as high as 10(4)-10(5) in their single-crystal organic field-effect transistors. Such high performances are attributed to the large orbital coefficient on the chalcogen atoms and the ideal packing structures induced by chalcogen-bridged W-shaped molecules.