Strain enhanced electron cooling in a degenerately doped semiconductor
Strain enhanced electron cooling in a degenerately doped semiconductor
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简并掺杂半导体中的应变增强电子冷却
DOI：
10.1063/1.3670330
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发表时间：
2011
影响因子：
4
通讯作者：
D. Leadley
中科院分区：
文献类型：
--
作者：
M. Prest;J. Muhonen;M. Prunnila;D. Gunnarsson;V. Shah;J. Richardson;A. Dobbie;M. Myronov;R. Morris;T. Whall;E. Parker;D. Leadley
在体积为40 μm3的应变硅/超导体隧道结制冷机中实现了增强的电子冷却。电子温度从300 mK降低到174 mK，与非应变硅控制（300 mK-258 mK）的增强归因于在应变的情况下较小的电子-声子耦合。硅基冷却器性能的建模和由此产生的预测。如果可以减少结子间隙泄漏和隧道电阻，则预计最低温度将进一步降低。然而，如果只减少隧道电阻，焦耳加热预计占主导地位。
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.