Nonthermally activated exciton transport in crystalline organic semiconductor thin films
Nonthermally activated exciton transport in crystalline organic semiconductor thin films
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晶体有机半导体薄膜中的非热激活激子传输
DOI：
10.1103/physrevb.89.201203
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发表时间：
2014
影响因子：
3.7
通讯作者：
T. Brixner
中科院分区：
文献类型：
--
作者：
A. K. Topczak;T. Roller;B. Engels;W. Brütting;J. Pflaum;S. Ruetzel;M. Diekmann;P. Nuernberger;C. Walter;B. Engels;T. Brixner
通过光致发光猝灭研究了原型有机半导体二茚并苝 (DIP) 中随温度变化的激子输运。通过包括干涉和形态方面在内的先进扩散模型进行的分析表明，室温下激子扩散长度约为 60 nm，这与 DIP 分子形状引起的长程有序有关。高于 80 K，单线态激子传输被 10 至 20 meV 的能量热激活。低于 80 K，激子运动变得与温度无关，并由传输层的晶体结构以及减少的声子相互作用支持。
The temperature dependent exciton transport in the prototypical organic semiconductor di-indeno-perylene (DIP) is investigated by photoluminescence quenching. Analysis by an advanced diffusion model including interference and morphological aspects reveals an exciton diffusion length of about 60 nm at room temperature, which relates to the long-range order induced by the DIP molecular shape. Above 80 K, singlet exciton transport is thermally activated with an energy of 10 to 20 meV. Below 80 K, exciton motion becomes temperature independent and is supported by the crystalline structure of the transport layer in combination with the reduced phonon interaction.