Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells
Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells
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钝化硅异质结太阳能电池中体缺陷的氢的起源
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
D. Macdonald
中科院分区：
文献类型：
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作者：
Chang Sun;W. Weigand;Jianwei Shi;Zhengshan J. Yu;R. Basnet;S. Phang;Z. Holman;D. Macdonald
硅异质结太阳能电池制造将显著量的氢结合到硅晶片本体中，并且注入的氢的量与在高温烧制步骤期间由氮化硅膜引入的氢的量相当。在这项工作中，异质结电池加工过程中注入的氢的来源已被确定。我们证明，氢等离子体处理，通常包括以提高表面钝化大大增加了氢浓度的晶片。我们还表明，氢化非晶硅的I/P+堆栈是更有效的比I/N+堆栈的散装氢掺入，都是更有效的比本征films单独.硅异质结太阳能电池制造纳入了大量的氢到硅晶片散装，和注入的氢的量是可比的氮化硅薄膜在高温烧制步骤中引入的。在这项工作中，异质结电池加工过程中注入的氢的来源已被确定。我们证明，氢等离子体处理，通常包括以提高表面钝化大大增加了氢浓度的晶片。我们还表明，氢化非晶硅的I/P+堆栈是更有效的比I/N+堆栈体氢掺入，都是更有效的比本征膜单独。
Silicon heterojunction solar cell fabrication incorporates a significant amount of hydrogen into the silicon wafer bulk, and the amount of injected hydrogen is comparable to that introduced by silicon nitride films during a high-temperature firing step. In this work, the origins of the hydrogen injected during heterojunction cell processing have been identified. We demonstrate that the hydrogen plasma treatment that is routinely included to improve surface passivation considerably increases the hydrogen concentration in the wafers. We also show that the hydrogenated amorphous silicon i/p+ stack is more effective than the i/n+ stack for bulk hydrogen incorporation, and both are more effective than intrinsic films alone.Silicon heterojunction solar cell fabrication incorporates a significant amount of hydrogen into the silicon wafer bulk, and the amount of injected hydrogen is comparable to that introduced by silicon nitride films during a high-temperature firing step. In this work, the origins of the hydrogen injected during heterojunction cell processing have been identified. We demonstrate that the hydrogen plasma treatment that is routinely included to improve surface passivation considerably increases the hydrogen concentration in the wafers. We also show that the hydrogenated amorphous silicon i/p+ stack is more effective than the i/n+ stack for bulk hydrogen incorporation, and both are more effective than intrinsic films alone.