New yield-aware mask strategies
New yield-aware mask strategies
复制标题
新的良率感知掩模策略
DOI：
10.1117/12.899295
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
C. Progler
中科院分区：
文献类型：
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作者：
Kwangok Jeong;A. Kahng;C. Progler
在本文中，我们提供了新的产量感知掩模策略，以减轻新兴的可变性和缺陷的挑战。为了解决变异性，我们分析CD变异性相对于掩模版的大小，其对参数产量的影响。利用结合了掩模、晶片和处理成本的成本模型，考虑生产量、产量和制造量，我们评估了各种掩模版策略（例如，单层光罩（SLR）、多层光罩（MLR）以及小尺寸和大尺寸），考虑到场尺寸相关的参数产率。为了解决缺陷，我们比较了由于EUV掩模空白缺陷的各种掩模版策略的参数产率，并结合掩模版平面图优化，例如掩模空白内的掩模图案的移位，以避免缺陷被设计的性能关键图案叠加。
In this paper, we provide new yield-aware mask strategies to mitigate emerging variability and defectivity challenges. To address variability, we analyze CD variability with respect to reticle size, and its impact on parametric yield. With a cost model that incorporates mask, wafer, and processing cost considering throughput, yield, and manufacturing volume, we assess various reticle strategies (e.g., single layer reticle (SLR), multiple layer reticle (MLR), and small and large size) considering field-size dependent parametric yield. To address defectivity, we compare parametric yield due to EUV mask blank defects for various reticle strategies in conjunction with reticle floorplan optimizations such as shifting of the mask pattern within a mask blank to avoid defects being superposed by performance-critical patterns of a design.