Population inversion and far-infrared emission from optically pumped silicon

Population inversion and far-infrared emission from optically pumped silicon
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光泵浦硅的粒子数反转和远红外发射

DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
V. Shastin
V. Shastin
中科院分区：
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文献类型：
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作者：
H. Hübers;K. Auen;S. Pavlov;E. Orlova;R. Zhukavin;V. Shastin

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研究了浅施主硅中粒子数反转和远红外发光的产生机制。用CO_2激光器光泵浦掺磷硅晶体，可以实现亚稳态2p_0态与1s（E）和1s（T）态之间的粒子数反转。从这些过渡的自发辐射被检测到。该发射的频率测量与预期的跃迁频率一致。用远红外探测激光测量吸收证实了2p0态与1s（E）和1s（T）态之间存在粒子数反转。
A mechanism for the generation of population inversion and far-infrared emission in Si with shallow donors is investigated. By optically pumping a phosphorus doped Si crystal with a CO2 laser it was possible to achieve population inversion between the metastable 2p0 state and the 1s(E) and 1s(T) states. Spontaneous emission from these transitions was detected. Frequency measurements of this emission are in agreement with the expected transition frequency. Absorption measurements with a far-infrared probe laser confirm the existence of population inversion between the 2p0 state and the 1s(E) and 1s(T) states.