Trion Electroluminescence from Semiconducting Carbon Nanotubes
Trion Electroluminescence from Semiconducting Carbon Nanotubes
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DOI:
10.1021/nn503046y
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发表时间:
2014-08-01
期刊:
影响因子:
17.1
通讯作者:
Zaumseil, Jana
中科院分区:
文献类型:
--
作者:
Jakubka, Florian;Grimm, Stefan B.;Zaumseil, Jana
Near-infrared emission from semiconducting single-walled carbon nanotubes (SWNTs) usually results from radiative relaxation of excitons. By binding an additional electron or hole through chemical or electrochemical doping, charged three-body excitons, so-called trions, are created that emit light at lower energies. The energy difference is large enough to observe weak trion photoluminescence from doped SWNTs even at room temperature. Here, we demonstrate strong trion electroluminescence from electrolyte-gated, light-emitting SWNT transistors with three different polymer sorted carbon nanotube species, namely, (6,5), (75) and (10,5). The red-shifted trion emission is equal to or even stronger than the exciton emission, which is attributed to the high charge carrier density in the transistor channel. The possibility of trions as a radiative relaxation pathway for triplets and dark excitons that are formed in large numbers by electron-hole recombination is discussed. The ratio of trion to exciton emission can be tuned by the applied voltages, enabling voltage-controlled near-infrared light sources with narrow line widths that are solution-processable and operate at low voltages (