Control of Two Types of Dielectric Relaxation Current for Ta2O5 Metal-Insulator-Metal Capacitors
Control of Two Types of Dielectric Relaxation Current for Ta2O5 Metal-Insulator-Metal Capacitors
复制标题
Ta2O5金属-绝缘体-金属电容器两种介质弛豫电流的控制
DOI：
10.1143/jjap.42.1943
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Hashimoto
中科院分区：
文献类型：
--
作者：
M. Kiyotoshi;K. Hieda;Y. Fukuzumi;Y. Kohyama;Toshiya Suzuki;D. Matsunaga;K. Hashimoto
Ta2O5是金属-绝缘体-金属（MIM）电容器最有前途的高k介电候选者，但其介电弛豫（DR）电流可能导致不可恢复的电荷损失，尽管DR是普通介电材料的普遍现象。为此，对Ta2O5 MIM电容器的DR特性及其控制进行了研究。Ta2O5 DR由两部分组成。其中一个组分表现出t-1型时间衰减，这被认为是由电子极化的不均匀性引起的，并且与SiN的阶数几乎相同。因此，它对动态随机存取存储器（DRAM）操作的影响将是有限的。另一组分表现为t-0.5型时间衰减，这是由Ta2O5的氢脱氧引起的，在脱氧的Ta2O5 dr中占主导地位，造成约16%的电荷损失。也就是说，它会对DRAM的运行产生不利的影响。N2退火是降低这种t-0.5型DR的可能解决方案。
Ta2O5 is the most promising high-k dielectric candidate for metal-insulator-metal (MIM) capacitors, but its dielectric relaxation (DR) currents may cause irrecoverable charge loss, although DR is a universal phenomenon of normal dielectrics. Therefore, the Ta2O5 MIM capacitors DR chasracteristics and their control were investigated. Ta2O5 DR is composed of two components. One component shows t-1-type time decay, which is assumed to be caused by nonuniformity of electron polarization and is almost of the same order as that of SiN. Thus, its influence on dynamic random access memory (DRAM) operation will be limited. The other component shows t-0.5-type time decay, which is caused by hydrogen deoxidation of Ta2O5, and is dominant in the case of deoxidized Ta2O5 DR. It causes about 16% charge loss. Namely, it will have an adverse influence on DRAM operation. N2 annealing is a possible solution for the reduction of this t-0.5-type DR.